Substratum
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Lamella sapphirina 3 pollices diametro 76.2mm crassitudine 0.5mm plani C SSP
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Substratum recuperationis fictitium lamellae siliconis octo unciarum, typi P/N (100), 1-100Ω
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Lamella SiC Epi 4unciae pro MOS vel SBD
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Duodecim pollices Sapphire Wafer C-Plane SSP/DSP
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Lamella silicii 2 pollices 50.8 mm FZ Typi N SSP
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Massa SiC 2 pollicum, Dia 50.8mm x 10mm, monocrystallina 4H-N
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Globus sapphiri plani C 200kg, methodus KY monocrystallina 99.999%, 99.999%
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Lamella silicii 4unciae FZ CZ Typi N DSP vel SSP gradus probationis
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Lamellae SiC quattuor unciarum, substrata SiC semi-insulantia 6H, gradus primarius, investigationis, et fictitii.
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Lamella substrati SiC HPSI 6unciarum, lamellae SiC semi-insultantes carburi silicii
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Lamellae SiC semi-insulantes 4 pollicum, substratum HPSI SiC, gradus productionis primae.
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Lamella substrati semi-SiC 4H 3 pollices 76.2 mm, lamellae SiC semi-insultantes e carburo silicii.