Nunc, societas nostra parvam massam 8inchN speciei SiC laganae supplere potest, si necessitates sample habes, liberum contactus me habebis.Aliquam sample laganum nobis paratus ratis.
In agro materiae semiconductoris, societas maiorem eruptionem fecit in investigatione et progressu magnae magnitudinis SiC crystallis.Utendo suo semine cristallum suum post multiplices diametri dilatationis circulos, societas bene 8-unc N-type crystallorum SiC crevit, quae problemata difficilia solvit ut campus temperatus inaequalis, cristallum fregisset et gas phase rudis materiae distributio in processu incrementi 8-inch SIC crystallis, incrementum magnae magnitudinis SIC crystallis et incrementum technologiae autonomae ac moderandae processus.Magnopere augendae societatis cori aemulationem in SiC industria unius crystalli subiectae.Eodem tempore, societas technologiae et processus magnae magnitudinis pii carbide substrata praeparatione experimentali linea actuose promovet, technicam commutationem et industrialem collaborationem confirmat in campis fluminis et amni, et cum clientibus cooperatur ad assidue iterandum productum effectum et coniunctim. gressum industrialis applicationis materiae carbidi Pii promovet.
| 8inch N-type SiC DSP Specs | |||||
| Numerus | Item | Unitas | Fabricatio | Inquisitionis | phantasma |
| 1. Morbi | |||||
| 1.1 | polytypum | -- | 4H | 4H | 4H |
| 1.2 | superficies naturae | ° | <11-20>4±0.5 | <11-20>4±0.5 | <11-20>4±0.5 |
| 2. parametri Electrical | |||||
| 2.1 | dopant | -- | n-genus Nitrogenium | n-genus Nitrogenium | n-genus Nitrogenium |
| 2.2 | resistivity | olim ·cm | 0.015~0.025 | 0.01~0.03 | NA |
| Mechanica 3. parametri | |||||
| 3.1 | diametri | mm | 200±0.2 | 200±0.2 | 200±0.2 |
| 3.2 | crassitudine | μm | 500±25 | 500±25 | 500±25 |
| 3.3 | SCARIFICATIO orientationis | ° | [1- 100]±5 | [1- 100]±5 | [1- 100]±5 |
| 3.4 | SCARIFICATIO Profundum | mm | 1~1.5 | 1~1.5 | 1~1.5 |
| 3.5 | LTV | μm | ≤5(10mm*10mm) | ≤5(10mm*10mm) | ≤10(10mm*10mm) |
| 3.6 | TTV | μm | ≤10 | ≤10 | ≤15 |
| 3.7 | Arcum | μm | -25~25 | -45~45 | -65~65 |
| 3.8 | Warp | μm | ≤30 | ≤50 | ≤70 |
| 3.9 | AFM | nm | Ra≤0.2 | Ra≤0.2 | Ra≤0.2 |
| 4. Stucture | |||||
| 4.1 | micropipe density | ea/cm2 | ≤2 | ≤10 | ≤50 |
| 4.2 | metallum contentus | atomi/cm2 | ≤1E11 | ≤1E11 | NA |
| 4.3 | TSD | ea/cm2 | ≤500 | ≤1000 | NA |
| 4.4 | BPD | ea/cm2 | ≤2000 | ≤5000 | NA |
| 4.5 | TED | ea/cm2 | ≤7000 | ≤10000 | NA |
| 5. Positivum qualitatem | |||||
| 5.1 | front | -- | Si | Si | Si |
| 5.2 | Superficiem metam | -- | Si-face CMP | Si-face CMP | Si-face CMP |
| 5.3 | particula | ea / laganum | ≤100(size≥0.3μm) | NA | NA |
| 5.4 | scalpere | ea / laganum | ≤5,Summa Longitudo 200mm | NA | NA |
| 5.5 | Acies eu / indents / rimis / sordibus / contagione | -- | Nullus | Nullus | NA |
| 5.6 | Polytypus areis | -- | Nullus | Area ≤10% | Area ≤30% |
| 5.7 | ante notati | -- | Nullus | Nullus | Nullus |
| 6. Back qualis | |||||
| 6.1 | metam retro | -- | C-face MP | C-face MP | C-face MP |
| 6.2 | scalpere | mm | NA | NA | NA |
| 6.3 | Retro defectus in ore eu / indents | -- | Nullus | Nullus | NA |
| 6.4 | Retro asperitatem | nm | Ra≤5 | Ra≤5 | Ra≤5 |
| 6.5 | Retro vestigium | -- | SCARIFICATIO | SCARIFICATIO | SCARIFICATIO |
| 7. Edge | |||||
| 7.1 | acies | -- | Chamfer | Chamfer | Chamfer |
| 8. Package | |||||
| 8.1 | packaging | -- | Epi-paratum cum vacuum packaging | Epi-paratum cum vacuum packaging | Epi-paratum cum vacuum packaging |
| 8.2 | packaging | -- | Multi laganum Paperback packaging | Multi laganum Paperback packaging | Multi laganum Paperback packaging |
Post tempus: Apr-18-2023