Substratum
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4H-N/6H-N SiC Wafer Reaquatio productio Dummy gradus Dia150mm Silicon substratum carbide
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Silicon-On-Insulator Substratum SOI laganum trium ordinum pro Microelectronics et Radio Frequency
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200kg C-planum Saphire boule 99.999% 99.999% monocrystaline KY method
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SOI laganum insulator in Pii VIII inch et VI inch SOI (Silicon-On-Insulator) lagana
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99,999% Al2O3 sapphiri boule monocrystal diaphanum
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6inch SiC Epitaxiy laganum N/P genus accept nativus
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Alumina ceramic laganum 4inch puritatis 99% polycrystallinum lapsum resistens 1mm crassitudine
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Silicon Dioxide laganum SiO2 laganum crassum politum, Prima et Test Grade
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200mm SiC substratum phantasma graduum 4H-N 8inch SiC laganum
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FZ CZ Si laganum in stirpe 12inch Silicon laganum Primus seu Test
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4H-N Dia205mm SiC semen ex Sinis P et D gradus Monocrystaline
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8inch Silicon laganum P/N-type (100) 1-100Ω dummy reuocare substratum