XII inch sic substratum Silicon carbide primum gradu diameter 300mm magna magnitudine 4h-n idoneam ad altum potentia fabrica æstus dissipatio

XII digitis sic substratum Silicon carbide primus gradus diameter 300mm magna mole 4h-n idoneam ad altus potentia fabrica æstus dissipatio Featured image

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A XII-inch Silicon carbide substratum (sic substratum) est magna-amplitudo, summus perficientur semiconductor materia subiectum ex uno crystallum Silicon carbide. Silicon Carbide (sic) est wide cohortis gap semiconductor cum optimum electrica, scelerisque et mechanica proprietatibus, quae late usus est in fabricantibus electronic cogitationes in altum potentia, altum frequency et altum temperatus environments. Et XII-inch (300mm) subiectum est current provectus specificationem Silicon carbide technology, quod potest significantly amplio productio efficientiam et reducere costs.

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Productum characteres

I. PRAECIPUUS PRECDIVITUDO: De PRAECIPUUS PRAECIPIO PRAECEPTIO Plus quam III temporibus Silicon, quae est idoneam ad altum potentia fabrica æstus dissipatio.

II. High naufragii Field vires: et naufragii Field vires est X temporibus, quod de Silicon, idoneus summus pressura applications.

3.Wide BandGap: et BandGap est 3.26EV (4h-sic), idoneam ad altum temperatus et altum frequency applications.

IV. High durum, Mohs duritiam est 9,2, secundo tantum adamas, optimum gerunt resistentia et mechanica vires.

V. Chemical Stabilitatem: ROSIO ROSIO resistentia, firmum perficientur in altum temperatus et dura environment.

VI. Large Size: XII inch (300mm) substrati, amplio productio efficientiam, reducere unitas sumptus.

7.Low defectus densitas, summus qualitas unum crystallum incrementum technology ut humilis defectus densitas et excelsum constantiam.

Product Main Application Direction

I. Power electronics:

Mosfets, in electrica vehicles, industriae motor agit et virtute converters.

Diodes: ut Schotty Diodes (SBD), propter efficient rectificem et switching potentia commeatibus.

II. RF cogitationes:

RF Power Amplifier: usus est in 5G communicationis basi stationibus et satellite communications.

Proin cogitationes, idoneam radar et wireless communicationis systems.

III. Novus Energy vehicles:

Electric Coegi Systems: Motor moderatoris et inverters ad electrica vehicles.

Prćcipiens acervum: Power moduli ieiunium præcipiens apparatu.

IV. Industrial Applications:

High voltage inverter: nam industriae motor imperium et industria procuratio.

Dolor eget, quia HVDC Transmissus et Power Electronics Transformers.

V. AEROSPACE:

High Temperature Electronics, idoneam ad altum temperatus environments de aerospace apparatu.

VI. Research agri:

Wide Bandgap Semiconductor Research: Nam progressionem novi semiconductor materiae et cogitationes.

Et XII-inch Silicon carbide subiectum est quaedam summus perficientur semiconductor materia subiectum optimis proprietatibus ut excelsum scelerisque conductivity, princeps naufragii agrum vires et wide gap. Est late in potentia electronics, radio frequency cogitationes, novum industria vehicles, industriae potestate et aerospace et est a key materia ad promovere progressionem de generatione agentibus et summus potentia electronic cogitationes.

Dum Silicon Carbide Substrate currently have paucioribus recta applications in dolor electronics ut ar specula, in potentiale in efficace potestate administratione et miniaturized electronics poterat sustinere Future AR / VR machinas. In praesens, pelagus progressionem de Silicon carbide substratum est conuenerunt in industriae agros ut novi industria vehicles, communicationis infrastructure et industriae automation et promovet in semiconductor industria ut develop in magis aciem et certiores directionem.

XKH committitur ad providing High Quality XII "SIC subiecta comprehensive technica firmamentum et servicia, comprehendo:

I. Customized productionem: secundum mos postulo providere alia resistentia, crystallum orientation et superficiem curatio substrat.

II. Processus Optimization: Provide customers cum technica firmamentum epitaxial incrementum, fabrica vestibulum et aliis processibus ad amplio uber perficientur.

III. Testing et certification: provide proprie defectus deprehendatur et qualitas certification ut subiectum occurrat industria signa.

4.R & D Cooperationis: Coniuce Novum Silicon Carbide cogitationes cum customers ad promovere technicae innovation.

Notitia chart

I II inch Silicon Carbide (sic) subiectum specificationem
Gradus		Zerompd productio Grade (Z gradu)	Vexillum productio Gradus (P gradu)		Donec gradu (D gradu)
Diameter		III 0 0 mm ~ 1305mm
Crassities	4H n	750μm XV μm	750μm ± XXV μm
	4H, si	750μm XV μm	750μm ± XXV μm
Wafer Orientation		Off axem: 4.0 ° Clementine_Vulgate <MCXX> ± 0,5 ° 4H-N, in axem: <001> ± 0,5 ° 4H-Si-
Micropipe density	4H n	≤0.4cm-II	≤4cm-II		≤25cm-II
	4H, si	≤5cm-II	≤10cm-II		≤25cm-II
Resistentia	4H n	0.015 ~ 0.024 Ω · cm			0.015 ~ 0.028 Ω · cm
	4H, si	≥1e10 Ω · cm			≥1e5 ω · cm
Primaria plana orientation		{10-10} ± 5.0 °
Primaria plana tandem	4H n	N / est
	4H, si	SCARIFICIUM
Edge Exclusio		III mm
LTV / TTV / Arcum / Warp		≤5μm / ≤15μm / ≤35 μm / ≤55 μm			≤5μm / ≤15μm / ≤35 □ μm / ≤55 □ μm
Asperitas		Poloniae Ra┬
		CMP Ra≤0.2 NM			Ra≤0.5 NM
Inde rimas a magno intensionem lucis Hex laminis ab altum intensionem lucis Polytype areas a summo intensionem lux Visual Carbon inclusions Silicon superficies scalpit per excelsum intensionem lux		Nemo Cumulative Area ≤0.05% Nemo Cumulative Area ≤0.05% Nemo			Cumulative longitudinem ≤ XX mm, una longa longitudinem mm Cumulativo area ≤0.1% Cumulative Area≤3% Cumulativo area ≤3% Cumulativo longitudinem × laga diameter
Ora eu in altum intensionem lucis		Nemo permittitur ≥0.2mm latitudine profundum			VII liceat, ≤1 mm se
(Tsd) Threading stupra peccetur		≤500 cm-II		N / est
(BPD) basi planum peccetur		≤1000 cm-II		N / est
Silicon superficiem contaminationem ab excelsis intensionem lux		Nemo
Packaging		Multi-Wafer Paperback vel una lagana continens
Praecipua:
I deficit fines applicare ad totius laganum superficiem nisi in ore exclusio area. 2The scalpit debet sedatus in faciem tantum. III De peccetur data est solum ex Koh etched wafers.

XKH will continue to invest in research and development to promote the breakthrough of 12-inch silicon carbide substrates in large size, low defects and high consistency, while XKH explores its applications in emerging areas such as consumer electronics (such as power modules for AR/VR devices) and quantum computing. Per reducendo costs et augendae facultatem, xkh et felicitatem ad semiconductor industria.