8Inch 200mm 4H-N SiC Wafer Conductive phantasma investigationis gradus

Description:

Sicut vecturae, industriae et mercaturae industriae evolvendae sunt, postulatio certa et alta perficiendi potestas electronicorum crescere pergit.Ad usus necessarios semiconductoris melioris effectus, fabricae fabricatores ad bandgap semiconductoris materias latas spectant, quales sunt nostri 4H SiC Primi Gradus librarius 4H n -type carbide silicon (SiC) lagana.

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Ob singulares proprietates physicas et electronicas, 200mm laganum semiconductorium SiC materia adhibita est ad efficiendum excelsum perficientur, summus temperatura, radiorum resistentia, et electronicarum frequentia.8inch SiC pretium subiectae paulatim decrescit sicut technicae artis progressus ac postulatio augetur.Progressiones technologiae recentes ducunt ad productionem scalae fabricationis 200mm laganae SiC.Praecipua commoditates materiae semiconductoris SiC lagani prae lagana Si et GaAs: agri electrica robur 4H-SiC in naufragii NIVIS CASUS plus est quam ordo magnitudinis altior quam valores respondentes Si et GaAs.Hoc minuit notabilem in statu resistivity Ron.Resistebilitas in statu humilis, cum densitate ac conductivity scelerisque currenti coniuncta, minimum usum pro viribus cogitationibus mori permittit.Princeps scelerisque conductivity SiC scelerisque resistentiam chip reducet.Proprietates electronicarum machinarum quae lagana SiC fundatae sunt valde stabilis super tempus et in stabilis temperatura, quae altam firmitatem praebet productorum.Carbida siliconis duriori radiorum maxime repugnat quae electronicas proprietates chipi non detrahit.Princeps limitans temperaturae crystalli operandi (plus 6000C) permittit te efficax machinas creare pro duras condiciones operativas et speciales applicationes.Nunc, massam parvam 200mmSiC laganam constanter et continue praebere possumus et aliquam stirpem in horreis habere.

Specification

Numerus	Item	Unitas	Fabricatio	Inquisitionis	phantasma
1. Morbi
1.1	polytypum	--	4H	4H	4H
1.2	superficies naturae	°	<11-20>4±0.5	<11-20>4±0.5	<11-20>4±0.5
2. parametri Electrical
2.1	dopant	--	n-genus Nitrogenium	n-genus Nitrogenium	n-genus Nitrogenium
2.2	resistivity	olim ·cm	0.015~0.025	0.01~0.03	NA
Mechanica 3. parametri
3.1	diametri	mm	200±0.2	200±0.2	200±0.2
3.2	crassitudine	μm	500±25	500±25	500±25
3.3	SCARIFICATIO orientationis	°	[1- 100]±5	[1- 100]±5	[1- 100]±5
3.4	SCARIFICATIO Profundum	mm	1~1.5	1~1.5	1~1.5
3.5	LTV	μm	≤5(10mm*10mm)	≤5(10mm*10mm)	≤10(10mm*10mm)
3.6	TTV	μm	≤10	≤10	≤15
3.7	Arcum	μm	-25~25	-45~45	-65~65
3.8	Warp	μm	≤30	≤50	≤70
3.9	AFM	nm	Ra≤0.2	Ra≤0.2	Ra≤0.2
4. Stucture
4.1	micropipe density	ea/cm2	≤2	≤10	≤50
4.2	metallum contentus	atomi/cm2	≤1E11	≤1E11	NA
4.3	TSD	ea/cm2	≤500	≤1000	NA
4.4	BPD	ea/cm2	≤2000	≤5000	NA
4.5	TED	ea/cm2	≤7000	≤10000	NA
5. Positivum qualitatem
5.1	front	--	Si	Si	Si
5.2	Superficiem metam	--	Si-face CMP	Si-face CMP	Si-face CMP
5.3	particula	ea / laganum	≤100(size≥0.3μm)	NA	NA
5.4	scalpere	ea / laganum	≤5,Summa Longitudo 200mm	NA	NA
5.5	Acies eu / indents / rimis / sordibus / contagione	--	Nullus	Nullus	NA
5.6	Polytypus areis	--	Nullus	Area ≤10%	Area ≤30%
5.7	ante notati	--	Nullus	Nullus	Nullus
6. Back qualis
6.1	metam retro	--	C-face MP	C-face MP	C-face MP
6.2	scalpere	mm	NA	NA	NA
6.3	Retro defectus in ore eu / indents	--	Nullus	Nullus	NA
6.4	Retro asperitatem	nm	Ra≤5	Ra≤5	Ra≤5
6.5	Retro vestigium	--	SCARIFICATIO	SCARIFICATIO	SCARIFICATIO
7. Edge
7.1	acies	--	Chamfer	Chamfer	Chamfer
8. Package
8.1	packaging	--	Epi-paratum cum vacuum packaging	Epi-paratum cum vacuum packaging	Epi-paratum cum vacuum packaging
8.2	packaging	--	Multi laganum Paperback packaging	Multi laganum Paperback packaging	Multi laganum Paperback packaging