Substratum SiC 4H-N SiC, lamellae SiC productionis gradus octo unciarum
Tabula sequens specificationes laminarum nostrarum SiC octo unciarum ostendit:
| Specificationes DSP SiC typi N 8 pollicum | |||||
| Numerus | Res | Unitas | Productio | Investigatio | Simulacrum |
| 1:parametri | |||||
| 1.1 | polytypus | -- | 4H | 4H | 4H |
| 1.2 | orientatio superficiei | ° | <11-20>4±0.5 | <11-20>4±0.5 | <11-20>4±0.5 |
| 2: Parametrus electricus | |||||
| 2.1 | dopans | -- | Nitrogenium typi n | Nitrogenium typi n | Nitrogenium typi n |
| 2.2 | resistivitas | ohm ·cm | 0.015~0.025 | 0.01~0.03 | NA |
| 3: Parametrus mechanicus | |||||
| 3.1 | diameter | mm | 200±0.2 | 200±0.2 | 200±0.2 |
| 3.2 | crassitudo | μm | 500±25 | 500±25 | 500±25 |
| 3.3 | Orientatio incisurae | ° | [1-100]±5 | [1-100]±5 | [1-100]±5 |
| 3.4 | Profunditas Incisurae | mm | 1~1.5 | 1~1.5 | 1~1.5 |
| 3.5 | LTV | μm | ≤5 (10mm * 10mm) | ≤5 (10mm * 10mm) | ≤10 (10mm * 10mm) |
| 3.6 | TTV | μm | ≤10 | ≤10 | ≤15 |
| 3.7 | Arcus | μm | -25~25 | -45~45 | -65~65 |
| 3.8 | Stamina | μm | ≤30 | ≤50 | ≤70 |
| 3.9 | AFM | nm | Ra≤0.2 | Ra≤0.2 | Ra≤0.2 |
| 4: Structura | |||||
| 4.1 | densitas microtuborum | singula/cm² | ≤2 | ≤10 | ≤50 |
| 4.2 | contentum metallicum | atomi/cm² | ≤1E11 | ≤1E11 | NA |
| 4.3 | TSD | singula/cm² | ≤500 | ≤1000 | NA |
| 4.4 | Perturbatio personalitatis limitem personalitatis (PPL) | singula/cm² | ≤2000 | ≤5000 | NA |
| 4.5 | TED | singula/cm² | ≤7000 | ≤10000 | NA |
| 5. Qualitas frontis | |||||
| 5.1 | frons | -- | Si | Si | Si |
| 5.2 | superficies ornata | -- | Si-face CMP | Si-face CMP | Si-face CMP |
| 5.3 | particula | crustulum/oblectum | ≤100 (magnitudo ≥0.3μm) | NA | NA |
| 5.4 | scalpere | crustulum/oblectum | ≤5, Longitudo Totalis ≤200mm | NA | NA |
| 5.5 | Margo fragmenta/incisiones/fissurae/maculae/contaminatio | -- | Nullus | Nullus | NA |
| 5.6 | Areae polytypae | -- | Nullus | Area ≤10% | Area ≤30% |
| 5.7 | notatio anterior | -- | Nullus | Nullus | Nullus |
| 6: Qualitas dorsi | |||||
| 6.1 | finis posterior | -- | MP faciei C | MP faciei C | MP faciei C |
| 6.2 | scalpere | mm | NA | NA | NA |
| 6.3 | Margo vitiorum posteriorum fragmenta/indentationes | -- | Nullus | Nullus | NA |
| 6.4 | Asperitas dorsi | nm | Ra≤5 | Ra≤5 | Ra≤5 |
| 6.5 | Notatio posterior | -- | Incisura | Incisura | Incisura |
| 7:margo | |||||
| 7.1 | margo | -- | Chamfer | Chamfer | Chamfer |
| 8: Sarcina | |||||
| 8.1 | involucrum | -- | Epi-paratus cum vacuo involucrum | Epi-paratus cum vacuo involucrum | Epi-paratus cum vacuo involucrum |
| 8.2 | involucrum | -- | Multi-lamella involucrum cassettae | Multi-lamella involucrum cassettae | Multi-lamella involucrum cassettae |
Diagramma Detaliatum
Producta Similia
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