SiC Typi N in Substratis Compositis Si Dia6unciae
| 等级Gradus | U | P级 | D级 |
| Gradus BPD humilis | Gradus Productionis | Gradus Simulacrum | |
| 直径Diameter | 150.0 mm ± 0.25 mm | ||
| 厚度Crassitudo | 500 μm ± 25 μm | ||
| 晶片方向Orientatio Lamellae | Extra axem: 4.0° versus <11-20> ±0.5° pro 4H-N; In axem: <0001>±0.5° pro 4H-SI | ||
| 主定位边方向Primaria Planities | {10-10}±5.0° | ||
| 主定位边长度Longitudo Plana Primaria | 47.5 mm ± 2.5 mm | ||
| 边缘Exclusio marginis | Tres millimetra | ||
| 总厚度变化/弯曲度/翘曲度 TTV/Arcu/Warp | ≤15μm / ≤40μm / ≤60μm | ||
| 微管密度和基面位错MPD et BPD | MPD ≤ 1 cm⁻² | MPD≤5 cm⁻² | MPD≤15 cm⁻² |
| BPD ≤ 1000 cm⁻² | |||
| 电阻率Resistivitas | ≥1E5 Ω·cm | ||
| 表面粗糙度Asperitas | Ra ≤1 nm politum | ||
| CMP Ra ≤ 0.5 nm | |||
| 裂纹(强光灯观测) # | Nullus | Longitudo cumulativa ≤10mm, longitudo singularis ≤2mm | |
| Fissurae a luce magnae intensitatis | |||
| .* | Area cumulativa ≤1% | Area cumulativa ≤5% | |
| Laminae hexagonales luce altae intensitatis | |||
| 多型(强光灯观测)* | Nullus | Area cumulativa ≤5% | |
| Areae polytypae luce altae intensitatis | |||
| 划痕(强光灯观测)*& | Tres scalpturae ad 1× diametrum crustulae | Quinque scalpturae ad 1× diametrum crustuli | |
| Striae a luce magnae intensitatis | longitudo cumulativa | longitudo cumulativa | |
| 崩边# Fragmentum marginis | Nullus | Quinque permissi, ≤1 mm singuli | |
| . | Nullus | ||
| Contaminatio a luce altae intensitatis | |||
Diagramma Detaliatum
