Producta
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Apparatus technologiae laseris microjet secandi lamellas ad materiam SiC tractandam
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Machina secans filum adamantum carburi silicii 4/6/8/12 unciarum ad tractandum massam SiC
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Methodus PVT crystalli longi resistentiae carburi silicii in fornace crescentis 6/8/12 pollices in massa crystalli SiC
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Machina quadrata duplici statione, virga silicii monocrystallina tractans, superficiem 6/8/12 pollicis, planitie Ra≤0.5μm
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Fenestra optica rubina, fenestra protectionis speculi laseris cum duritie Mohs 9, alta transmittantia.
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Bionicus non-lubricus substratus lamellae portans suctor vacuus suctor frictionis
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Lentis siliconis obductae, siliconis monocrystallini, pellicula antireflexa AR ad usum aptata obducta
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GGG crystallus gemma synthetica gadolinium gallium granatum ornamenta ad libitum
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Sapphirum Corundum pro Gemma Al2O3 crystallus rubinus caeruleus regius
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Substrata Silicii Carbidi (HPSl) semi-insulantia, lamellae trium unciarum, altae puritatis (sine dopatione)
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Lamella substrati SiC 4H-N 8 unciarum, e carburo silicii simulato, crassitudine 500um, gradus investigationis.
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Sapphiri dia crystallus singularis, alta duritia Morhs 9 resistens abrasioni, configurabilis