Products
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p-type 4H/6H-P 3C-N TYPE SIC subiecta 4inch 〈111〉± 0.5° Nulla MPD
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SiC substrato P-type 4H/6H-P 3C-N 4inch crassitudine 350um productio gradus Donec gradus
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4H/6H-P 6inch SiC laganum Nulla MPD Grade Productio Grade Donec Grade
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P-type SiC laganum 4H/6H-P 3C-N 6inch crassities 350 µm cum Primae Flat propensione
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Alumina brachii ceramic consuetudo brachii Ceramici robotici
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Tubus Sapphirus KY Methodus omnia perspicua Mos
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Al2O3 99.999% sapphiri consuetudo herbae perspicuae gerunt renitentes 38×4.5×0.3mmt
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Capillus sapphirus ensis transferre potest nativus ad medicinae proposita
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Lilac YAG rudis materia pulveris purpura in stock
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TVG processus in vicus sapphiri BF33 laganum laganum Vitri laganum pungendo
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Unius Crystal Silicon Wafer Si Substratum Type N/P Libitum Silicon Carbide Wafer
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N-Type SiC composita Substrat Dia6inch Qualitas Monocrystaline et humilis qualitas subiecta