SIC Ceramic Chuck Tray Ceramic Suction Cucurbitulae Precision Machining customized

Sic Ceramic Chuck Tray Ceramic Suction Cucurbita Precision Machining customized featured image

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Silicon Carbide Ceramic Tray Sucker est idealis choice for semiconductor vestibulum debitum ad eius princeps duritia, excelsum scelerisque conductivity et optimum eget stabilitatem. Et altus plana et superficies perago ut plena contactus inter laganum et potator, reducendo contagione et damnum; High temperatus et corrosio resistentia idoneam dura processum ambitibus; In eodem tempore, Longe Long Vita Characteres reducere productionem costs et necessaria clavis components in lagam costs et secans, politicibus, Lithography et aliis processibus.

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Material habet:

1.High Duriter: De Mohs duritiam Silicon carbide est 9.2-9.5, secundo adamantino, cum fortis gerunt resistentia.
II. Conductor scelerisque: De scelerisque Footmal de Silicon Carbide est princeps ut 120-200 w / m K, quod potest dissipare calor celeriter et idoneam ad altum temperatus elit.
III. Minimum scelerisque expansion coefficiente: Silicon carbide scelerisque expansion coefficiens est humilis (4.0-4.5 × 10⁻⁶ / k), potest etiam ponere dimensional stabilitatem ad altum temperatus.
IV. Chemical stabilitatem: Silicon Carbide acid et alkali corrosio resistentia, idoneam usum in eget mordendo environment.
V. Maximum Mechanica Fortitudo: Silicon Carbide habet princeps flectens vires et compressive fortitudinem, et potest sustinere magna mechanica accentus.

Features:

1.In the semiconductor industry, extremely thin wafers need to be placed on a vacuum suction cup, the vacuum suction is used to fix the wafers, and the process of waxing, thinning, waxing, cleaning and cutting is performed on the wafers.
2.Silicon carbide potator est bona scelerisque conductivity, potest efficaciter breviare in crescente et crescente, amplio productio efficientiam.
3.Silicon Carbide vacuo Sucker etiam habet bonum acidum et alkali corrosio resistentia.
4.comPared cum Traditional Corundum carrier laminam, breviare de loading et unloading calefactio et refrigerationem tempore, amplio opus efficientiam; Simul potest reducere inter superiorem et inferiorem laminas, ponere bonum planum accurate, et extend in ministerium vitae per circiter XL%.
5.The materia proportio est parva, lux pondus. Est facilius ad operators ad portare grabatis, reducendo periculum collisione damnum per onerariam difficultates circiter XX%.
6.size: maximum diameter 640mm; Platness: 3um vel minus

Applicationem agro:

I. Semiconductor vestibulum
● Wafer Processing:
Nam lacus in photolithography, etching, tenuis film depositione et aliis processibus, ensuring princeps accurate et processum constantiam. Suum summus temperatus et corrosio resistentia est idoneam dura semiconductor vestibulum elit.
● epitaxial incrementum:
In Sic vel Gan epitaxial incrementum, ut carrier ad calorem et fix wafers, cursus temperatus uniformitatem et crystal qualitas ad altum temperaturis, meliorem fabrica perficientur.
II. Photoelectric Equipment
● DUXERIT vestibulum:
Usus est figere sapphirus et sic substratum, et sicut calefactio carrier in Mocvd processus, ut ad uniformitatem epitaxial incrementum, amplio ducitur luminosum efficientiam et qualitas.
● laser Diode:
Sicut summus praecisione, fixing et calefactio substrati ut process temperatus stabilitatem, amplio output potestate et reliability de laser diode.
III. Precision machining
● optical component processus:
Est usus ad fixing praecisione components ut optical lentium et Filtra ad curare altus praecisione et humilis pollutio in dispensando, et idoneam ad altus-intensionem machining.
● Ceramic Processing:
Sicut summus stabilitatem fixture, idoneam pro praecisione machining de Ceramic materiae ut curare machinens accurate et constantia sub altum temperatus et corrosi environment.
IV. Scientific Experimenta
● High Temperature Experimentum:
Ut sample fixation fabrica in altum temperatus environments, quod sustinet extrema temperatus experimenta supra MDC ° C ad temperatus uniformitatem et specimen stabilitatem.
● Vacuum test:
Ut sample fixing et calefactio carrier in vacuo environment, ut accurate et repeatability de experimentum, idoneam ad vacuum coating et calor curatio.

Technical Specifications:

(Material res)		(Unit)	(Ssic)
(SIC content)		(Wt)%	> XCIX
(Mediocris grano magnitudine)		micron	4-10
(Density)		KG / DM3	> 3,14
(Apparent Porosity)		Vo1%	<0,5
(Vickers obdurare)	HV 0.5	Gpa	28
* (Flexural Fortitudo) * (Tres puncta)	20ºC	MPA	CDL
(Contraved Fortitudo)	20ºC	MPA	MMMCM
(Elastica modulus)	20ºC	Gpa	CDXX
(Fractura lenta)		MPA / m '%	3.5
(Thermal conductivity)	XX ° ºc	*W / (m k)**	CLX
(Resistentia)	XX ° ºc	Ohm.cm	106-108
(Thermal expansion coefficient)	A (Rt 80ºC)**	*K, I 10-6**	4.3
(Maximum operating temperatus)		oºc	MDCC

Cum annis technica cumulus et industria experientia, XKH potest ad scissuram clavis parametri ut magnitudine, calefacit modum et vacuum adsorptionption consilium de Paul secundum specifica accommodata ad Lorem processus. Sic Silicon Carbide Ceramic chucks et facti sunt necessaria components in laganum processus, epitaxial incrementum et alia clavis processibus ex eorum optimum scelerisque conductivity, summus temperatus stabilitatem et eget stabilitatem. Praesertim in vestibulum tertia-generation semiconductor materiae ut sic et Gan, in demanda pro Silicon Carbide Ceramic chucks continues crescere. In futuro, cum celeri progressionem 5G, electrica vehicles, artificialis intelligentia et aliis technologiae, applicationem spes Silicon carbide Ceramic chucks in semiconductor industria et latior.