Sic
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6 in Pii Carbide 4H-SiC Semi-Ingolationis Ingot, Dummy Grade
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SiC Ingot 4H genus Dia 4inch 6inch Crassitudo 5-10mm Research / Donec Gradus
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III inch High puritas (Undoped) Pii Carbide lagana semi-insulando Sic Substrates (HPSl)
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Sic Substrate Silicon Carbide Wafer 4H-N Type Gravitas Corrosio Resistentia Primi Gradus Polonica
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2inch Silicon Carbide Wafer 6H-N Type Primi Gradus Research Grade Dummy Grade 330μm 430μm Crassitudo
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2inch pii carbidi substratum 6H-N diametri duplex trilineum politum 50.8mm gradus investigationis gradus productio
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N-Type SiC composita Substrat Dia6inch Qualitas Monocrystaline et humilis qualitas subiecta
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Semi-Insulating SiC composita Substrat Dia2inch 4inch 6inch 8inch HPSI
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N-Type SiC on Si Composita Substrates Dia6inch
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SiC substratum Dia200mm 4H-N et HPSI Pii carbide
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3inch SiC Substratum Productio Dia76.2mm 4H-N
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SiC subiectum P et D gradus Dia50mm 4H-N 2inch