Silicon Carbide Ceramic Tray Silicon Silicon Carbide Ceramic Tube Supple High Temperature Sincering Custom Processing

Silicon Carbide Ceramic Tray Silicon Silicon Carbide Ceramic Tube Supple High Topicon De Sincering Custom Processing Featured Image

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Silicon Carbide Ceramic Tray et Silicon Carbide Ceramic Tubes sunt indispensable summus perficientur materiae in semiconductor vestibulum. Silicon Carbide Ceramic Tray est maxime usus in laganum processus certa et afferentem, ut ad stabilitatem summus praecisione processus; Silicon carbide tellus tubos late in altum temperies fornacem tubulis, diffusa fornacem fornacem et aliae missionibus sustinere extrema environments et ponere efficiens scelerisque administratione. Tum quod secundum Silicon carbide sicut core materia, quae facta est key component in semiconductor industria ex eius optimum physica et eget proprietatibus.

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Main Features:

I. Silicon Carbide Ceramic Tray
- Altus duritia et gerunt resistentia: et duritia est prope adamantino, et potest sustinere mechanica gerunt in laganum processui diu.
- High scelerisque conductivity et humilis scelerisque expansion coefficient, ieiunium calor dissipatio et dimensional stabilitatem, avoiding deformatio fecit per scelerisque accentus.
- High Platness et Superficies Conclusio, in superficies plana est usque ad micron campester, cursus plena contactus inter lagam et orbis, reducendo contaminationem et damnum.
Chemical stabilitatem: fortis corrosio resistentia, idoneam ad infectum Purgato et etching processus in semiconductor vestibulum.
II. Silicon Carbide Ceramic Tube
- High Temperature resistentia: Potest operari in altum temperatus environment supra MDC ° C ad longo tempore, idoneam ad semiconductor altum temperatus processus.
Optimum corrosio resistentia repugnans acida, alkalis et varietate eget solvents, idoneam dura processum ambitus.
- High durum et gerunt resistentia: resistere particula exesa et mechanica gerunt, extend muneris vitae.
- High scelerisque conductivity et humilis coefficientem de scelerisque expansion: ieiunium conduction caloris et dimensional stabilitatem, reducendo deformatio vel fregisset ex scelerisque accentus.

Product Parameter:

Silicon Carbide Ceramic Tray Parameter:

(Material res)		(Unit)	(Ssic)
(SIC content)		(Wt)%	> XCIX
(Mediocris grano magnitudine)		micron	4-10
(Density)		KG / DM3	> 3,14
(Apparent Porosity)		Vo1%	<0,5
(Vickers obdurare)	HV 0.5	Gpa	28
* () Flora Fortitudo * (Tres Points)	20ºC	MPA	CDL
(Contraved Fortitudo)	20ºC	MPA	MMMCM
(Elastica modulus)	20ºC	Gpa	CDXX
(Fractura lenta)		MPA / m '%	3.5
(Thermal conductivity)	XX ° ºc	W / (m * k)	CLX
(Resistentia)	XX ° ºc	Ohm.cm	106-108
(Thermal expansion coefficient)	A (Rt ** 80ºC)	K, I * 10-6	4.3
(Maximum operating temperatus)		oºc	MDCC

Silicon Carbide Ceramic Tube Parameter:

PRAECIPUUS	Index
α-sic	XCIX% min
Apparent Porosity	XVI% max
Mole density	2.7g / CM3 min
Tendentes vires ad caliditas	M MPa min
Coefficientem scelerisque expansion	K-I 4.7x10 -6
Coefficiens scelerisque conductivity (1400ºC)	XXIV w / MK
Max. Opus temperatus	1650ºC

Pelagus Applications:

I. Silicon Carbide Ceramic laminam
- Wafer secans et politionem, serves ut afferentem platform ut altus praecisione et stabilitatem durante cutting et politionem.
- Lithologs process: et laganum est fixum in lithoography apparatus ut altus praecisione positioning durante nuditate.
- Chemical mechanica Polishing (CMP): Act ut Support Platform pro Polising Pads, providente uniformis pressura et æstus distribution.
II. Silicon Carbide Ceramic Tube
- High Topace Tube: usus est summus temperatus apparatu ut diffusa fornacem et oxidation fornacem ad portare wafers in altum temperatus processus curatio.
- CVD / PVD Processus: ut afferentem fistulam in reactionem cubiculum, repugnant ad altum temperaturis et mordax vapores.
- Siconductor apparatibus forcia, quia calor deicit, Gas pipelines, etc, ut amplio scelerisque administratione efficientiam in apparatu.
Xkh offert a plena range of mos servicia pro Silicon Carbide Ceramic Trays, SUCTION CIRCUM et Silicon Carbide Ceramic Tubes. Silicon Carbide Ceramic Trays et suctionis pocula, XKH potest customized secundum Lorem requisitis diversis magnitudinum, figuras et superficiem asperitas et suscipere speciali coating et curatio, augendae resistentia et corrosio resistentia; augendae resistentia et corrosio resistentia; augendae resistentia et corrosio resistentia; augendae resistentia et corrosio resistentia; augendae resistentia et corrosio resistentia; augendae resistentia et corrosio resistentia; augendae resistentiam et corrosio resistentia; augendae resistentiam et corrosio resistentia; Nam Silicon Carbide Ceramic fistulae, XKH potest customize a varietate interiore diametro, exterius diameter, longitudo et complexu structuram (ut informibus fistulam vel raro), et alias superficiem curatio, anti-oxidatio coating et alias superficiem curatio. XKH ensures quod customers can take plena utilitatem de perficientur beneficia de Silicon carbide tellus products in occursum postulans requisitis summus finem vestibulum agris ut semiconductors, leats et photovoltaics.