Substratum
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TVG processus in vicus sapphiri BF33 laganum laganum Vitri laganum pungendo
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Unius Crystal Silicon Wafer Si Substratum Type N/P Libitum Silicon Carbide Wafer
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N-Type SiC composita Substrat Dia6inch Qualitas Monocrystaline et humilis qualitas subiecta
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Semi-Insulating SiC in Si composita Substrates
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Semi-Insulating SiC composita Substrat Dia2inch 4inch 6inch 8inch HPSI
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P-type SiC substrata SiC laganum Dia2inch novum productum
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N-Type SiC on Si Composita Substrates Dia6inch
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SiC substratum Dia200mm 4H-N et HPSI Pii carbide
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3inch SiC Substratum Productio Dia76.2mm 4H-N
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SiC subiectum P et D gradus Dia50mm 4H-N 2inch
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Vitrum subest TGV 12inch laganum Vitri pulsandi
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4H-N/6H-N SiC Wafer Reaquatio productio Dummy gradus Dia150mm Silicon substratum carbide