Substratum
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2Inch 6H-N Silicon Carbide Substratum Sic Wafer Duplex politum Conductivum Primi Gradus Mos Grade
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SiC laganum pii carbidum SiC laganum 4H-N 6H-N HPSI-Num puritatis Semi-insulantis ） 4H/6H-P 3C -n type 2 3 4 6 8inch praesto
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sapphirus regula 3inch 4inch 6inch Monocrystal CZ KY methodus customizable
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anulus sapphirus factus ex materia sapphiri synthetica diaphana et customisabilis Mohs duritiei 9
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2 inch Sic pii carbide substratum 6H-N Type 0.33mm 0.43mm duplex quadratum expolitio Maximum scelerisque conductivity humilis potentia consummatio
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GaAs summus potentiae epitaxial laganum gallium arsenide laganum substratum potentia laser necem 905nm pro laser curatione
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GaAs laser epitaxiale laganum 4 inch 6 inch VCSEL cavitatis verticalis superficies emissio laseris necem 940nm confluentia unius
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2inch 3inch 4inch InP laganum epitaxial substratum APD lucis detector pro fibra communicationum opticorum vel LIDAR
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anulus sapphirus totus anulus sapphirus totus ex sapphiro diaphano lab confecto materia sapphiri fabricata
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Sapphirus ingot dia 4inch× 80mm Monocrystallinus Al2O3 99.999% Singulus Crystal
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Sapphirus Prisma Sapphire Lentis Diaphanum Al2O3 BK7 JGS1 JGS2 Materia Optica Instrumenti
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SiC subiecta 3inch 350um crassitudine HPSI genus Primus Gradus Donec gradus