Substratum
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Pii Carbide SiC Ingot 6inch N type Donec / primi gradus crassitudo potest ba nativus
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6 in Pii Carbide 4H-SiC Semi-Ingolationis Ingot, Dummy Grade
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SiC Ingot 4H genus Dia 4inch 6inch Crassitudo 5-10mm Research / Donec Gradus
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III inch High puritas (Undoped) Pii Carbide lagana semi-insulando Sic Substrates (HPSl)
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6inch sapphirus Boule sapphirus blank una cristallus Al2O3 99,999%
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Sic Substrate Silicon Carbide Wafer 4H-N Type Gravitas Corrosio Resistentia Primi Gradus Polonica
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2inch Silicon Carbide Wafer 6H-N Type Primi Gradus Research Grade Dummy Grade 330μm 430μm Crassitudo
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2inch pii carbidi substratum 6H-N diametri duplex trilineum politum 50.8mm gradus investigationis gradus productio
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p-type 4H/6H-P 3C-N TYPE SIC subiecta 4inch 〈111〉± 0.5° Nulla MPD
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SiC substrato P-type 4H/6H-P 3C-N 4inch crassitudine 350um productio gradus Donec gradus
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4H/6H-P 6inch SiC laganum Nulla MPD Grade Productio Grade Donec Grade
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P-type SiC laganum 4H/6H-P 3C-N 6inch crassities 350 µm cum Primae Flat propensione