Substratum
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3inch 76.2mm 4H-Semi SiC laganum SiC laganum
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3inch Dia76.2mm SiC substernitur HPSI Primi Research et Dummy gradus
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4H-semi HPSI 2inch Sic subiecta laganum Productio Donec Research gradus
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2 inch SiC Wafers 6H vel 4H Semi-Insulating SiC Substrat Dia50.8mm
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Sapphirus 8 pollicis 200mm sapphirus laganus sapphirus gracilis crassitudo 1SP 2SP 0.5mm 0.75mm
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Unius crystallus Al2O3 99,999% Dia200mm laganae sapphiri 1.0mm 0,75mm crassitudine
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Electrode Sapphirus Substratum et laganum C-planum DUXERIT Substrates
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156mm 159mm 6 inch Sapphirus Wafer pro carrierC-Plane DSP TTV
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Dia101.6mm 4inch M-planum Sapphirus Substrat Wafer DUXERIT Substrat Crassitudo 500um
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C/A/M axis 4 pollicis lagana sapphiri unius crystallini Al2O3,SSP DSP sapphiri durities altae substratis
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Dia50.8×0.1/0.17/0.2/0.25/0.3mmt Sapphirum Wafer Subiectum Epi-paratum DSP SSP
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4H-N 8 inch SiC laganum laganum Silicon Carbide Donec Research gradus 500um crassities