Substratum
-
8inch 200mm Silicon Carbide SiC Wafers 4H-N genus productio gradus 500um crassities
-
8 inch 200mm Sapphirus Wafer Subsrate 1SP 2SP 0.5mm 0.75mm
-
4 inch Al2O3 99,999% Sapphirus laganum Dia101.6×0.65mmt cum Primaria Flat Longitudo Substratum Al2O3 99.999%
-
3inch 76.2mm 4H-Semi SiC laganum SiC laganum
-
2inch 50.8mm Silicon Carbide SiC Wafers Doped Si N-genus Productio Research et Donec gradus
-
2 inch 50.8mm Sapphiri laganum C-planum M-planum R-planum A-planum
-
2inch 50.8mm Germanium Wafer Substratum Unicum crystallum 1SP 2SP
-
3inch 4 inch 6inch LiNbO3 Wafer Substratum Simplex cristallum materia
-
8 Inch Lithium Niobate Wafer LiNbO3 LN laganum
-
2 inch 50.8mm Sapphirus Wafer C-planum M-planum R-planum Crassitudo 350um 430um 500um
-
2 inch 50.8mm Crassitudo 0.1mm 0.2mm 0.43mm Sapphirus Wafer C-planum M-planum R-planum A-planum
-
8 inch 200mm Sapphirus Wafer Subsrate SSP DSP Crassitudo 0.5mm 0.75mm