Substratum
-
3inch Dia76.2mm SiC substernitur HPSI Primi Research et Dummy gradus
-
4H-semi HPSI 2inch Sic subiecto laganum Productio Donec Research gradus
-
2 inch SiC Wafers 6H vel 4H Semi-Insulating SiC Substrates Dia50.8mm
-
Sapphirus 8 inch 200mm Sapphirus sapphirus laganus tenuissimus crassitudinis 1SP 2SP 0,5mm 0.75mm
-
Unius crystallus Al2O3 99,999% Dia200mm laganae sapphiri 1.0mm 0,75mm crassitudine
-
Electrode Sapphire Substratum et laganum C-planum DUXERIT Substrates
-
156mm 159mm 6 inch Sapphirus Wafer pro carrierC-Plane DSP TTV
-
Dia101.6mm 4inch M-planum Sapphirus Substrat Wafer DUXERIT Substrat Crassitudo 500um
-
C/A/M axis 4 pollicis lagana sapphiri unius crystallini Al2O3,SSP DSP sapphiri durities altae substratis
-
Dia50.8×0.1/0.17/0.2/0.25/0.3mmt Sapphirum Wafer Subiectum Epi-paratum DSP SSP
-
4H-N 8 inch SiC laganum laganum Silicon Carbide Donec Research gradus 500um crassities
-
8inch 200mm Silicon Carbide SiC Wafers 4H-N genus productio gradus 500um crassities