Substratum
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3inch Dia76.2mm SiC substernitur HPSI Primi Research et Dummy gradus
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4H-semi HPSI 2inch Sic subiecta laganum Productio Donec Research gradus
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2 inch SiC Wafers 6H vel 4H Semi-Insulating SiC Substrat Dia50.8mm
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Electrode Sapphirus Substratum et laganum C-planum DUXERIT Substrates
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Dia101.6mm 4inch M-planum Sapphirus Substrat Wafer DUXERIT Substrat Crassitudo 500um
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Dia50.8×0.1/0.17/0.2/0.25/0.3mmt Sapphirum Wafer Subiectum Epi-paratum DSP SSP
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8 inch 200mm Sapphirus Wafer Subsrate 1SP 2SP 0.5mm 0.75mm
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4 inch Al2O3 99,999% Sapphirus laganum Dia101.6×0.65mmt cum Primaria Flat Longitudo Substratum Al2O3 99.999%
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3inch 76.2mm 4H-Semi SiC laganum SiC laganum
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2inch 50.8mm Silicon Carbide SiC Wafers Doped Si N-genus Productio Research et Donec gradus
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2 inch 50.8mm Sapphiri laganum C-planum M-planum R-planum A-planum
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2 inch 50.8mm Sapphirus Wafer C-planum M-planum R-planum Crassitudo 350um 430um 500um