Substratum
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Substratum Silicii super Insulatorem, lamellam SOI tribus stratis ad Microelectronicam et Frequentiam Radiophonicam
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Duodecim pollices Sapphire Wafer C-Plane SSP/DSP
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Insulator lamellae SOI in lamellae silicii octo unciarum et sex unciarum SOI (Silicon-On-Insulator)
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Globus sapphiri plani C 200kg, methodus KY monocrystallina 99.999%, 99.999%
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Materia perspicua monocrystallina sapphirina 99.999% Al2O3
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Lamella ceramica aluminae, 4 pollicum, puritatis 99%, polycrystallina, abrasioni resistens, crassitudine 1 mm.
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Lamella dioxidi silicii, lamella SiO2 crassa, polita, prima et probationis gradus
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Substratum SiC fictum gradus 200mm, lamella SiC 4H-N 8 pollicum
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Lamellae SiC quattuor unciarum, substrata SiC semi-insulantia 6H, gradus primarius, investigationis, et fictitii.
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Lamella substrati SiC HPSI 6unciarum, lamellae SiC semi-insultantes carburi silicii
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Lamellae SiC semi-insulantes 4 pollicum, substratum HPSI SiC, gradus productionis primae.
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Lamella substrati semi-SiC 4H 3 pollices 76.2 mm, lamellae SiC semi-insultantes e carburo silicii.