Substratum
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3inch Dia76.2mm laganum sapphiri 0,5mm crassitudinis C-planum SSP
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4inch SiC Epi laganum MOS vel SBD
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Silicon laganum 4inch 6inch 8inch 12inch
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2inch SiC ingot Dia50.8mmx10mmt 4H-N monocrystal
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Silicon-On-Insulator Substratum SOI laganum trium ordinum pro Microelectronics et Radio Frequency
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SOI laganum insulator in Pii VIII inch et VI inch SOI (Silicon-On-Insulator) lagana
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4 inch SiC Wafers 6H Semi-Insulating SiC Substrat primum, investigationis et gradus phantastici.
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6inch HPSI SiC substrata laganum Silicon Carbide Semi contumeliae SiC uncta
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4inch Semi contumelia SiC uncta HPSI SiC subiecta Prima productio gradus
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3inch 76.2mm 4H-Semi SiC laganum SiC laganum
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3inch Dia76.2mm SiC substernitur HPSI Primi Research et Dummy gradus
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4H-semi HPSI 2inch Sic subiecta laganum Productio Donec Research gradus