Substratum
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Lamella ceramica aluminae, 4 pollicum, puritatis 99%, polycrystallina, abrasioni resistens, crassitudine 1 mm.
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Insulator lamellae SOI in lamellae silicii octo unciarum et sex unciarum SOI (Silicon-On-Insulator)
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Substratum SiC fictum gradus 200mm, lamella SiC 4H-N 8 pollicum
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Semen SiC 4H-N Dia205mm e Sinis, monocrystallinum gradus P et D.
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Lamella SiC Epitaxiy 6unciarum typus N/P accepta ad necessitates personalizatas
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Dia150mm 4H-N 6inch SiC substrati Productio et gradus fictitii
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Lamella dioxidi silicii, lamella SiO2 crassa, polita, prima et probationis gradus
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Lamella sapphirina 3 pollices diametro 76.2mm crassitudine 0.5mm plani C SSP
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Lamella SiC Epi 4unciae pro MOS vel SBD
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Lamella Si FZ CZ in promptu, lamella silicii 12 pollicum, prima vel probata.
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Massa SiC 2 pollicum, Dia 50.8mm x 10mm, monocrystallina 4H-N
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Lamellae SiC quattuor unciarum, substrata SiC semi-insulantia 6H, gradus primarius, investigationis, et fictitii.