8inch 200mm Silicon Carbide SiC Wafers 4H-N genus productio gradus 500um crassities

8inch 200mm Silicon Carbide SiC laganum 4H-N genus Productio gradus 500um crassities Featured Image

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Shanghai Xinkehui Tech.Co., Ltd offert optimas lectio et pretia pro carbide uncta silicon-qualitatis summus et subiecta diametros 8inch cum N- et semi-insulating typos.Parvae et magnae semiconductores machinae societates et investigationes labs in usu totius mundi et in lagana carbide silicone nostro nituntur.

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200mm 8inch SiC Substratum Specification

Size: 8inch;

Diameter: 200mm±0.2;

Crassitudo: 500um±25;

Superficies Orientatio: 4 ad [11-20]±0.5°;

SCARIFICATIO orientationis: [1-100]±1°；

Notch profundum: 1±0.25mm；

Micropipe: <1cm2;

Hex Plates: Nihil licet;

Resistivity: 0.015~0.028Ω;

EPD:<8000cm2;

TED:<6000cm2

BPD:<2000cm2

TSD:<1000cm2

SF: area <1%

TTV≤15um；

Warp≤40um；

Bow≤25um；

Areae Poly: ≤5%;

Scalpe: <5 et cumulativum Longitudo< 1 Wafer Diameter;

Chips/Indents: Nemo permittit D>0.5mm Latitudo et Profundum;

Rimas: nemo;

Labe: nemo

Wafer ora: Chamfer;

Superficies metam: Duplex Side Polonica, Si Face CMP;

Packing: Multi-wafer Cassette Or Single Wafer Container;

Difficultates currentes in praeparatione crystallorum 200mm 4H-SiC mainl

1) Praeparatio GENERALIS 200mm 4H-SiC crystallorum seminis;

2) Magnae magnitudinis campus temperatus non-uniformitatis ac processus nucleationis temperans;

3) De efficientia et evolutione elementorum gaseorum onerariis in systematis cristalli incrementi largeis;

4) Crystal crepuit et defectus proliferation ex magna magnitudine accentus scelerisque auget.

Ad has provocationes vincere et qualitatem altam 200mm SiC waferssolutionum obtinere proponuntur:

In terminis 200mm seminis crystalli praeparatio, campus campi temperatus conveniens, conventus dilatandi studuit et ordinavit ut inactionem cristalli qualitatem et amplitudinem cresceret;Incipiens cum 150mm SiC se:d crystallum, semen cristalli iterationem exsequens ut crystallumam SiC gradatim extendat donec 200mm attingat;Per multiplicem cristalli incrementum et processiig, paulatim optimize qualitatem crystalli in cristallo expanso area, et qualitatem 200mm crystallorum seminis emendare.

In terminis 200mm crystallini conductivi et substrati praeparationis, investigationes optimized campi temperaturae et campi fluit consilium pro magna magnitudine crystalli, 200mm conductivorum SiC crystalli augmentum et moderatio doping uniformitatem.Post asperam processus et cristalli conformationem, 8-inchelectricaly conductive 4H-SiC regulam cum signo diametri adeptus est.Post sectionem, stridorem, politionem, processus obtinendum SiC 200mm uncta cum crassitudine 525um vel sic.