Producta
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Methodus tractationis superficiei virgarum lasericarum sapphirinarum titanio imbutarum
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Crustae SiC e carburo silicii, 8 pollicum, 200 mm, typi 4H-N, crassitudine 500 µm.
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Substratum carburi silicii 6H-N 2 pollices, lamella silicio-carburi, dupliciter polita, conductiva, gradus primi, gradus mos-carburi.
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GaN 200mm 8unciarum in substrato sapphirino Epi-laminato.
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Tubus sapphiri Methodus KY omnino pellucidus Adaptabilis
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Substratum compositum SiC conductivum sex unciarum, 4H, diametro 150mm, Ra≤0.2nm, deformatione≤35μm.
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Instrumentum perforationis laseris infrarubri nanosecundi ad perforationem vitri crassitudinis ≤20mm
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Apparatus technologiae laseris microjet secandi lamellas ad materiam SiC tractandam
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Machina secans filum adamantum carburi silicii 4/6/8/12 unciarum ad tractandum massam SiC
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Methodus CVD ad materias primas SiC altae puritatis producendas in fornace synthetica carburi silicii ad 1600℃
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Methodus PVT crystalli longi resistentiae carburi silicii in fornace crescentis 6/8/12 pollices in massa crystalli SiC
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Machina quadrata duplici statione, virga silicii monocrystallina tractans, superficiem 6/8/12 pollicis, planitie Ra≤0.5μm