Sic
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4H-N 8 inch SiC laganum laganum Silicon Carbide Donec Research gradus 500um crassities
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4H-N/6H-N SiC Wafer Reaquatio productio Dummy gradus Dia150mm Silicon substratum carbide
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12 inch SIC substrata carbida pii gradus diameter 300mm magnae magnitudinis 4H-N idoneae ad altam potentiam fabrica caloris dissipationis
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HPSI SiC laganum dia:3inch crassities:350um± 25 µm pro Potentia Electronics
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8 inch SiC pii carbide laganum 4H-N genus 0,5mm productio gradus investigationis gradus consuetudo substrata polito
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3inch High puritas Semi-Insulating HPSI）SiC laganum 350um Donec gradus Primus gradus
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P-type SiC substrata SiC laganum Dia2inch novum productum
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8inch 200mm Silicon Carbide SiC Wafers 4H-N genus productio gradus 500um crassities
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2Inch 6H-N Silicon Carbide Substratum Sic Wafer Duplex politum Conductivum Primi Gradus Mos Grade
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III inch High puritas (Undoped) Silicon Carbide Wafers semi-insulando Sic Substrates (HPSl)
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Au obductis laganum sapphiri laganum laganum silic laganum 2inch 4inch 6inch. Aurum obductis crassitie 10nm 50nm 100nm
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SiC laganum 4H-N 6H-N HPSI 4H-semi 6H semi 4H-P 6H-P 3C genus 2inch 3inch 4inch 6inch 8inch