Sic
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Pii Carbide SiC Ingot 6inch N type Donec/primus gradus crassitudo potest ba nativus
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Sic Ingot 4H-N genus Donec gradus 2inch 3inch 4inch 6inch crassitudine: 10mm
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HPSI SiC laganum dia:3inch crassities:350um± 25 µm pro Potentia Electronics
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3inch High puritas Semi-Insulating HPSI）SiC laganum 350um Donec gradus Primus gradus
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Sic Substrate Silicon Carbide Wafer 4H-N Type Gravitas Corrosio Resistentia Primi Gradus Polonica
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2Inch 6H-N Silicon Carbide Substratum Sic Wafer Duplex politum Conductivum Primi Gradus Mos Grade
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2inch Silicon Carbide Wafer 6H-N Type Primi Gradus Research Grade Dummy Grade 330μm 430μm Crassitudo
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2inch pii carbidi substratum 6H-N diametri duplex trilineum politum 50.8mm gradus investigationis gradus productio
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N-Type SiC composita Substrat Dia6inch Qualitas Monocrystaline et humilis qualitas subiecta
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Semi-Insulating SiC composita Substrat Dia2inch 4inch 6inch 8inch HPSI
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P-type SiC substrata SiC laganum Dia2inch novum productum
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N-Type SiC on Si Composita Substrates Dia6inch