Sic
-
4H-N 8 inch SiC laganum laganum Silicon Carbide Donec Research gradus 500um crassities
-
4H-N/6H-N SiC Wafer Reaquatio productio Dummy gradus Dia150mm Silicon substratum carbide
-
8inch 200mm Silicon Carbide SiC Wafers 4H-N genus productio gradus 500um crassities
-
HPSI SiC laganum dia:3inch crassities:350um± 25 µm pro Potentia Electronics
-
8 inch SiC pii carbide laganum 4H-N genus 0,5mm productio gradus investigationis gradus consuetudo substrata polito
-
3inch High puritas Semi-Insulating HPSI）SiC laganum 350um Donec gradus Primus gradus
-
P-type SiC substrata SiC laganum Dia2inch novum productum
-
2Inch 6H-N Silicon Carbide Substratum Sic Wafer Duplex politum Conductivum Primi Gradus Mos Grade
-
SiC laganum pii carbidum SiC laganum 4H-N 6H-N HPSI-Num puritatis Semi-insulantis ） 4H/6H-P 3C -n type 2 3 4 6 8inch praesto
-
2 inch Sic pii carbide substratum 6H-N Type 0.33mm 0.43mm duplex quadratum expolitio Maximum scelerisque conductivity humilis potentia consummatio
-
SiC subiecta 3inch 350um crassitudine HPSI genus Primus Gradus Donec gradus
-
Pii Carbide SiC Ingot 6inch N type Donec / primi gradus crassitudo potest ba nativus