Substratum
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4H-N 8 inch SiC laganum laganum Silicon Carbide Donec Research gradus 500um crassities
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4H-N/6H-N SiC Wafer Reaquatio productio Dummy gradus Dia150mm Silicon substratum carbide
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8inch 200mm Silicon Carbide SiC Wafers 4H-N genus productio gradus 500um crassities
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Dia300x1.0mmt Crassitudo Sapphiri Wafer C-Plane SSP/DSP
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Sapphirus 8 pollicis 200mm sapphirus laganus sapphirus gracilis crassitudo 1SP 2SP 0.5mm 0.75mm
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8 inch SiC pii carbide laganum 4H-N genus 0,5mm productio gradus investigationis gradus consuetudo substrata polito
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HPSI SiC laganum dia:3inch crassities:350um± 25 µm pro Potentia Electronics
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Unius crystallus Al2O3 99,999% Dia200mm laganae sapphiri 1.0mm 0,75mm crassitudine
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156mm 159mm 6 inch Sapphirus Wafer pro carrierC-Plane DSP TTV
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C/A/M axis 4 pollicis lagana sapphiri unius crystallini Al2O3,SSP DSP sapphiri durities altae substratis
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3inch High puritas Semi-Insulating HPSI）SiC laganum 350um Donec gradus Primus gradus
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P-type SiC substrata SiC laganum Dia2inch novum productum