Productus
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4H-n VIII inch sic substratum laganae Silicon Carbide Dummy investigationis gradu 500um crassitudine
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4H-N / 6h-N SIC Wafer Reasearch productio DIGNUS Dia150mm Silicon carbide substratum
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8inch 200mm Silicon carbide sicca 4h-n genus productio gradus 500um crassitudine
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Dia300x1.0mmt crassitudine sapphirus lana C-planum ssp / DSP
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VIII digitis 200mm sapphirus subiecta sapphyrus lagoenae tenui crassitudine 1sp 2sp 0.75mm 0.75mm
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HPPSI sic Wafer Dia: 3inch Crassitudo: 350um ± XXV μm pro potestate electronics
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VIII Inch Sic Silicon Carbide Wafer 4H-N Typus 0.5mm productio gradus investigationis gradu mos politum substratum
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Una Crystal Al2o3 99,999% Dia200mm Sapphire Wafers 1.0mm 0.75mm crassitudine
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156mm 159mm VI inch sapphyrus laganus ad Carrierc-planum DSP TTV
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C / A / m axis IV inch sapphire wafers unum crystallum al2o3, ssp dsp princeps duritia sapphyrus subiecta
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3inch altum puritatis semi-insulating (HPSI) Sicci 350um Dummy gradu Primmy
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P-Type sic non substratum sic wafer Dia2inch novae uber