SiC
-
Lamella SiC Epitaxiy 6unciarum typus N/P accepta ad necessitates personalizatas
-
Dia150mm 4H-N 6inch SiC substrati Productio et gradus fictitii
-
Lamella SiC Epi 4unciae pro MOS vel SBD
-
Massa SiC 2 pollicum, Dia 50.8mm x 10mm, monocrystallina 4H-N
-
Substratum SiC fictum gradus 200mm, lamella SiC 4H-N 8 pollicum
-
Lamellae SiC quattuor unciarum, substrata SiC semi-insulantia 6H, gradus primarius, investigationis, et fictitii.
-
Lamella substrati SiC HPSI 6unciarum, lamellae SiC semi-insultantes carburi silicii
-
Lamellae SiC semi-insulantes 4 pollicum, substratum HPSI SiC, gradus productionis primae.
-
Lamella substrati semi-SiC 4H 3 pollices 76.2 mm, lamellae SiC semi-insultantes e carburo silicii.
-
Substrata SiC 3 pollices diametro 76.2mm, HPSI Prime Research et gradus fictitii
-
Substratum SiC 2 pollices 4H-semi HPSI, lamellae simulatae, gradus investigationis ad productionem.
-
Lamellae SiC duarum unciarum, substrata SiC semi-insulantia 6H vel 4H, diametro 50.8mm