Substratum
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Lamellae SiC duarum unciarum, substrata SiC semi-insulantia 6H vel 4H, diametro 50.8mm
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Substratum Sapphiri Electrodi et Substrata LED Plani C-Lamellae
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Substrata Sapphira Lamellata LED, Diametro 101.6mm, 4 pollices, Plano M, Crassitudo 500um
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Dia 50.8×0.1/0.17/0.2/0.25/0.3mmt Substratum lamellae sapphirinae Epi-paratum DSP SSP
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Substratum lamellae sapphirinae octo unciarum, 200 mm, 1 SP 2 SP 0.5 mm 0.75 mm
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Lamella substrati sapphirini Al2O3 99.999% altae puritatis, 4 pollices, Dia 101.6 × 0.65 mmt, cum longitudine plana primaria.
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Lamella substrati semi-SiC 4H 3 pollices 76.2 mm, lamellae SiC semi-insultantes e carburo silicii.
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Crustulae SiC 2 pollices 50.8 mm e carburo silicii, Silicium dopatum, typi N, ad investigationem productionis et ad gradum fictum.
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Lamella Sapphirina 2 pollices 50.8mm Planum C Planum M Planum R Planum A
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Substratum Germanii Wafer 2 unciarum 50.8 mm, crystallus singularis 1SP 2SP
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Substratum LiNbO3 lamellae, 3 pollices, 4 pollices, 6 pollices, materia crystallina singularis.
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Lamella Lithium Niobate 8 pollicum Lamella LiNbO3 LN