Substratum
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Massa SiC 2 pollicum, Dia 50.8mm x 10mm, monocrystallina 4H-N
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Lamella SiC Epitaxiy 6unciarum typus N/P accepta ad necessitates personalizatas
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Lamellae SiC quattuor unciarum, substrata SiC semi-insulantia 6H, gradus primarius, investigationis, et fictitii.
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Lamella substrati SiC HPSI 6unciarum, lamellae SiC semi-insultantes carburi silicii
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Lamellae SiC semi-insulantes 4 pollicum, substratum HPSI SiC, gradus productionis primae.
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Lamella substrati semi-SiC 4H 3 pollices 76.2 mm, lamellae SiC semi-insultantes e carburo silicii.
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Substrata SiC 3 pollices diametro 76.2mm, HPSI Prime Research et gradus fictitii
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Substratum SiC 2 pollices 4H-semi HPSI, lamellae simulatae, gradus investigationis ad productionem.
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Lamellae SiC duarum unciarum, substrata SiC semi-insulantia 6H vel 4H, diametro 50.8mm
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Substratum Sapphiri Electrodi et Substrata LED Plani C-Lamellae
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Substrata Sapphira Lamellata LED, Diametro 101.6mm, 4 pollices, Plano M, Crassitudo 500um
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Dia 50.8×0.1/0.17/0.2/0.25/0.3mmt Substratum lamellae sapphirinae Epi-paratum DSP SSP